| PART |
Description |
Maker |
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF1730G IRFI730G IRFI730GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)
Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)
|
IRF[International Rectifier]
|
| IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRL |
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A )
HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )
ULTRA LOW ON RESISTANCE
|
International Rectifier
|
| IRC540 |
Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.077ohm，身份证\u003d 28A条）
Power MOSFET(Vdss=100V/ Rds(on)=0.077ohm/ Id=28A)
Hexfet? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFIZ24N IRFIZ24NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=14A)
|
IRF[International Rectifier]
|
| IRF6215LPBF IRF6215SPBF IRF6215RLPBF |
Advanced Process Technology
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29ヘ , ID=-13A )
HEXFET POWER MOSFET ( VDSS=-150V , RDS(on)=0.29Ω , ID=-13A )
|
Vishay Siliconix
International Rectifier
|
| IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份证\u003d- 6.6A
P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管）
P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF
International Rectifier, Corp.
|
| IRFL4310 IRFL4310TR |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
